The aim of research work is a Mossbauer study of electron exchange processes between tin centers in crystalline and glassy chalcogenide semiconductors.
Scientific novelty of dissertation work is as follows:
composition of As|.xSex, Gci.xSex и Gei.x.yAsySex, Asy(Gei.zSez)i.y glassy alloys and solid solutions has been determined by means of x-ray fluorescent technique, with fluorescent stimulation by brake X-ray radiation or by mono-energy electrons (with error ±0.0002) on x, у and z parameters in the surface layer of depth from 0.1 mm (using brake X-ray radiation) upto 0.1 mem (using electron stimulation);
for the first time EMS with "9mSn isomer using maternal ll9mmSn and ll9Sb nucleus has been used to determine the process of electron exchange between Sn^+ and Snj*+ states of donor If defects, created by tin mixture in degenerate and non-dcgcncratc crystalline lead chalcogenides and glassy alloys (As2Se3)|.z(SnSe) z.x(GeSe)x and samples of solid solutions (A = Na, Tl, x = 0.01-^0.02 and 0.005) within temperature range 80 + 900 K;
it has been shown that the lines responding to Sn^+ and Sn^+ states were converging in the Mossbauer spectra with the temperature increase, that corresponds to the electron exchange between the states at the expense of two electrons transfer simultaneously;
the dependence of central shift of ll9Sn Mossbauer spectra for Ph^Sn^-xSe, compounds on composition has been explained within electron exchange model between Sn^+ and Sn^ states of donor U center created by tin;
electron exchange between Sn^’and Sn3+ states has not been detected in the Ge2S3, Ge3Se3и As0S3, As,Se3glassy alloys containing amphoteric U defects created by tin impurity upto 480 K, that can be explained by existance of bivalent and four-valent tin in different coordinational states.
