Volume 03 Issue 01-2023
23
International Journal of Advance Scientific Research
(ISSN
–
2750-1396)
VOLUME
03
I
SSUE
01
Pages:
23-28
SJIF
I
MPACT
FACTOR
(2021:
5.478
)
(2022:
5.636
)
A
BSTRACT
The anisotropy in thin films coincides with the crystallographic direction of an increase in the thickness of
the iron layer. The value of the cubic anisotropy constant decreases. In this case, the value of the uniaxial
anisotropy constant, on the contrary, increases. The dilution of the semiconductor matrix with iron atoms
is also noted, and the formation of Fe-Ga or Fe-As compounds is assumed. An analysis of the surface
sensitivity of the spectra of As and Ga shows that As is more easily mixed with Fe than with Ga.
K
EYWORDS
Journal
Website:
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Research Article
ANALYSIS OF STUDYING THE STRUCTURE OF EPITAXIAL
IRON FILMS ON GALLIUM ARSENIDE Fe/GaAs
Submission Date:
January 20, 2023,
Accepted Date:
January 25, 2023,
Published Date:
January 30, 2023
Crossref doi:
https://doi.org/10.37547/ijasr-03-01-05
Odinakhan Rayimjonova
Phd, Docent, Fergana Branch Of Tashkent University Of Information, Technologies Named After
Muhammad Al-Khwarizmi, Fergana, Uzbekistan
Sherali Toshpulatov
Assistant, Fergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad
Al-Khwarizmi, Fergana, Uzbekistan
Gulrukhsor Ergasheva
Student, Fergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad Al-
Khwarizmi, Fergana, Uzbekistan
Dilshod Tulanov
Teacher, Academic Lyceum Under Namangan Institute Of Engineering And Construction, Namangan,
Uzbekistan
Volume 03 Issue 01-2023
24
International Journal of Advance Scientific Research
(ISSN
–
2750-1396)
VOLUME
03
I
SSUE
01
Pages:
23-28
SJIF
I
MPACT
FACTOR
(2021:
5.478
)
(2022:
5.636
)
Thin films, electron beam epitaxial, uniaxial and cubic anisotropy, ferromagnetic resonance.
I
NTRODUCTION
At present, much attention is paid to the
development of technology for creating devices
based on controlling the orientation of electron
spins in a semiconductor material. In such
devices, it is necessary to pump, transfer, control
the state, and switch the magnetic moments of
electrons at temperatures above room
temperature. In order to obtain high spin
polarization, materials with a high Curie
temperature should be used, such as iron on a
semiconductor substrate.
Thin films are solid or liquid (rarely gaseous)
layers between macroscopic phases, the
thickness of which is commensurate with the
distance of action of surface forces. They have
special (in comparison with the bulk phase from
which a thin film was formed) composition,
structure and thermodynamic characteristics. A
distinction is made between symmetrical thin
films separating phases of the same composition,
and asymmetric thin films formed, for example,
by spreading liquid on a solid or liquid surface
(wetting films). Hard thin films are oxide films on
the surface of metals and artificial film coatings
formed on various materials. Liquid thin films
separate gaseous, dispersed phase informs and
liquid phase emulsions. Liquid thin films can form
spontaneously between grains in polycrystalline
solids if surface energy grain boundaries exceed
surface tension at the boundary of the solid and
liquid phases more than twice (the Gibbs-Smith
condition) [3-9].
Main Part
A large number of experimental and theoretical
works are devoted to the study of interface
systems, such as metal-semiconductor. The
complexity of the atomic structure and
morphology of such systems does not allow for
completely experimental and theoretical analysis
of the internal parameters. All modern models for
describing the metal-semiconductor interface are
based on studies of the epitaxial interface
between a single-crystal semiconductor and a
single-crystal metal. Thin films of iron on gallium
arsenide Fe/GaAs were used as the sample under
study. The films were obtained by electron beam
epitaxy in an ultrahigh vacuum chamber [10-14].
Volume 03 Issue 01-2023
25
International Journal of Advance Scientific Research
(ISSN
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2750-1396)
VOLUME
03
I
SSUE
01
Pages:
23-28
SJIF
I
MPACT
FACTOR
(2021:
5.478
)
(2022:
5.636
)
Fig. 1. Ga 3d (a) and As 3d (b) spectra of electronic levels in the iron atom in the case of successive
deposition of Fe.
The results show that in the first stage of iron film
growth at thicknesses from 0 to 1 monolayer
(ML), there is no strong interaction between the
metal atoms and the substrate. The next stage of
film formation (the thickness of the metal layer is
from 1 to 40 ML) can be characterized by the
appearance of a strong chemical bond between
iron atoms and gallium atoms. The spectra in
Figure 1. show a strongly shifted component,
showing changes in the local atomic order for Ga
and As. The presence of a mixed phase, in which
As and Ga are present simultaneously with Fe (in
the form of metallic inclusions), is retained up to
an iron film thickness of 15 ML.
The dilution of the semiconductor matrix with
iron atoms is also noted, and the formation of Fe-
Ga or Fe-As compounds is assumed. An analysis of
the surface sensitivity of the spectra of as and Ga
shows that as is more easily mixed with Fe than
with Ga. From the experimental results, it can be
said that the reaction occurs at the interface.
Thermodynamic calculations indicate that this
reaction will be characterized by the formation of
a Fe-As solid solution. Comparing the results for
thin films of iron on gallium arsenide with the
results for thin films of transition metals also on
gallium arsenide, one can distinguish the
formation of surface layers at the metal/GaAs
interface. Such a transition layer can be
characterized as a multiphase chemical system.
Investigation of the dependence of the constants
of uniaxial and cubic anisotropy in thin films of
iron on gallium arsenide Fe/GaAs(001) on the
thickness of the iron film, which varied in the
range from 5 to 20 ML. The value of the
anisotropy constants was estimated based on the
analysis of the FMR spectra and angular
dependences obtained for frequencies of 4.03
GHz and 9.24 GHz.
Volume 03 Issue 01-2023
26
International Journal of Advance Scientific Research
(ISSN
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2750-1396)
VOLUME
03
I
SSUE
01
Pages:
23-28
SJIF
I
MPACT
FACTOR
(2021:
5.478
)
(2022:
5.636
)
R
ESULTS
The direction of the easy anisotropy axis in the
considered thin films coincides with the
crystallographic direction. It was also found that
with an increase in the thickness of the iron layer,
a decrease in the value of the cubic anisotropy
constant occurs. In this case, the value of the
uniaxial anisotropy constant, on the contrary,
increases. The effect is possibly associated with
surface phenomena at the Fe-InAs interface, for
example, the resulting mechanical stress. Also,
the appearance of uniaxial anisotropy in the
samples under consideration can be affected by
the peculiarity of the growth of the first iron layer
on the indium arsenide substrate.
Fig. 2. Dependence of the resonant field on the orientation of the sample relative to the external
magnetic field. The dashed line shows the theoretically obtained
In the study of the properties of a thin film of iron
on gallium arsenide Fe/GaAs (the thickness of the
iron film is d = 11 ± 0.1 nm). To characterize the
magnetic properties of the system, the method of
ferromagnetic resonance FMR - spectrometry, as
well as the method of Brillouin scattering (BS), is
used. The results of FMR - measurements of the
dependence of the resonant field on the
orientation of the sample are shown.
The table shows the obtained values of system
parameters such as saturation magnetization,
and values of uniaxial and cubic anisotropy
constants.
Table 1. Obtained values of the parameters of a thin film of iron on gallium arsenide
Volume 03 Issue 01-2023
27
International Journal of Advance Scientific Research
(ISSN
–
2750-1396)
VOLUME
03
I
SSUE
01
Pages:
23-28
SJIF
I
MPACT
FACTOR
(2021:
5.478
)
(2022:
5.636
)
Method
4πM, k
E
K1/M, kE
KU/M, kE
FMR
15.6
0.21
0.04
BR
15.6
0.21
0.14
Analysis of the results In the sample under
consideration, there is an induced uniaxial
anisotropy, the axis of which is perpendicular to
the plane of the film. The saturation
magnetization values obtained from the analysis
of the results of each method give the same
values, which correlate with the theoretical value
(4πM
t = 16 kE). Pa
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