All articles
METHODOLOGY FOR DEVELOPING SKILLS AND ABILITIES IN MAKING DEMONSTRATION EXPERIMENTAL DEVICES IN PHYSICS TEACHING
Teaching physics is an interesting and complex field that requires constant research. Modern information technologies help in teaching science and scientific research. On the other hand, in an era of rapid development of science and technology, it can be difficult to interest modern students. In addition, information overload can lead to short-term retention of resources in the brain. Therefore, the ability to effectively use new technologies in each lesson is one of the main requirements for teachers [1]. This article discusses the issues of expanding the use of modern demonstration experiments in classes by professors and teachers in the higher education system and the formation of their skills and abilities to create new generations. It also aims to increase teaching efficiency through the use of real and virtual laboratories and develop teachers’ skills in creating demonstration experimental devices.
Matrix methods and algorithms for steady–statestability analysis of electric power systems
The relevance and demanding of the subject of the thesis. Today, in the world practice, in the sphere of ensuring the stable operation of electric power systems (EPS), pride of place goes to the creation of high-performance control systems of power generation and consumption processes, involving intelligent technologies. One of the most crucial tasks of rapidly developing modem EPS is ensuring its steady-state stability based on real-time operational data processing and analysis. In this area, the leading countries of the world focus on the improvement of control systems to ensure the stability of electric power systems, taking into account fluctuations of mode parameters. «Expenses for the creation of intelligent electric systems, including Smart Grid, arc as follows: USA - 7.1 trillion, China -7.3 trillion, Japan - 0.8 trillion US dollars. The use of the Smart Grid system in 2020 will allow the USA to save about 1.8 trillion US dollars»1.
Large-scale activities on the effective organization of power generation and improvement of the EPS stability arc held in the Republic of Uzbekistan. A number of research works arc carried out in this area, including high-performance reequipment of the steam-gas and gas-turbine technology, providing electricity generation, the development of effective control system of technological objects and improvement of methods and algorithms of research of control systems.
The world's attention is paid to the development of more advanced methods for determining the stability of electric systems, in particular, matrix methods and algorithms that allow to more deeply explore the modal properties of electric power systems, taking into account modem control devices. The implementation of targeted research is a priority in this field, while researches arc more relevant in the following areas: the development of matrix methods and algorithms for determining the stability of the electric power system based on automatic generator field regulators; the development of simplified criteria for determining the limit mode for the stability of complex EPS; the development of a model of synthesis of automatic field regulators on the basis of the system inclusion technology. Ongoing researches in the above-mentioned areas show the relevance of the subject of this thesis.
This thesis research is designed, to a certain extent, to perform the tasks stipulated in the Decree of the President of the Republic of Uzbekistan ПП-2343 dated 5 May 2015ycar “On the Program of measures to reduce energy consumption, to implement energy saving technologies in the fields of economy and social sphere for 2015-2019 yy.”, in the Decree of Cabinet of Ministers of the Republic of Uzbekistan No.238 dated 13 August 2015 year “On approval of the regulation relating to the republican commission on energy efficiency and development of the renewable energy resources”, as well as other legal documents adopted in this area.
The objective of the research is to develop matrix methods and algorithms of analysis of steady-state stability of complex EPS, to develop simplified methods of estimation of steady-state stability limit and synthesis of controller models based on the systems’ embedding approach.
Scientific innovativeness of the dissertation study consists in the following:
on the basis of Lyapunov’s function in the quadratic form, the simplified criterion of steady-state stability of the electric power system was obtained, which consisted in positivity of the first major minor of the quadratic-form matrix (<7n > 0), ensuring necessary and sufficient conditions of the EPS stability;
the combined use of the method of Lyapunov’s function in the quadratic form and node voltage equations was developed, which allowed for reducing studies of steady-state stability of a complex electric power system to the circuitry of a simple electric power system, or the “generator-bus” system;
a promatrix of the complex unregulated and regulated electric power system was developed on the basis of the system’s embedding method, which allowed for the study of dynamic properties of EPS;
the algorithm of pole transfer from the spectrum of the matrix of own dynamics of the electric power system was developed, which ensured stability and damping of fluctuations of the operation condition parameters at small oscillations in electric power systems;
mathematical model of the class of regulators of the complex electric system was constructed on the basis of the system’s embedding method, which ensured stability and damping of fluctuations of the operation condition parameters at small oscillations in EPS.
CONCLUSION
The theoretical and computational-experimental studies of steady-state stability of complex electric systems, carried out on the basis of the developed matrix methods and algorithms, using Lyapunov’s functions in the quadratic form and system’s embedding method, allow for the following conclusions.
1. Lyapunov’s functions in the quadratic form arc recommended as the effective method for studying the linear dynamic systems, including the electric power system described with the help of linear zed differential equations.
2. Adequacy of conditions of the steady-state stability loss of the electric power system, obtained on the basis of positivity of major minors of the quadratic-form matrix of the Lyapunov’s function in the quadratic from, to the same conditions provided by Hurwitz criteria, was proven.
3. Obtained theoretical and computational results allow one to investigate the stability of EPS “in the small” by means of analysis of the positivity condition of the first major minor of the Lyapunov’s function in the quadratic formq11; > Oand consider it to be the practical (simplified) criterion of steady-state stability of EPS, providing for both its necessary and sufficient conditions.
4. The combined use of Lyapunov’s functions in the quadratic form and nodal equations allows one to reveal the generator (station), operating in the complex EPS, which is coming to the limit in terms of steady-state stability. The mathematical condition of this proposition is dqnj /dFl -» max, i.e. the maximum of the derivative of the first major minor of the quadratic-form matrix by the regulated parameter for the j-th generator. It is evident that in this case, the study of the steady-state stability limit of the complex EPS turns into the study of the “generator-bus” circuit.
5. On the basis of the systems embedding method, promatrices of the unregulated and regulated complex EPS arc developed, which provide a full description of all kinds of characteristics of transitional processes, including the possibility of studying dynamic properties of electric power systems at small oscillations of their operation condition parameters.
6. The model is proposed, in which the regulator of the complex electric power system has been synthesized on the basis of the systems embedding theory to describe analytically the class of regulators ensuring stability and damping of oscillations of the studied EPS.
7. The conducted computational-experimental studies aimed at analysis of steady-state stability of complex EPS on the basis of the systems embedding method have shown the qualitative match of the obtained results with the results, checked in the course of practical running of electric power systems on the basis of Classical Methods that confirms the adequacy of the models developed to the already existing ones.
8. The mathematical model of the electric power system, resolved relative to deviations of absolute angles of synchronous generators, is developed, which can be used autonomously for the study of small oscillations of complex EPS. This model of small oscillations must be used together with node voltage equations, determining voltage modules of nodes and their arguments, representing absolute angles relative to the balancing node.
Mass of charge carrier and optical conductivity of polarons within the framework of extended Holstein model
Subjects of research: polaron, bipolaron, cuprates.
Purpose of work: development of small polaron Holstein model, taking into account long-range electron-phonon interaction to establish the possible existence of a polaron with a small mass and explain the value of the mass of the charge carrier, infrared absorption, and the high values of the superconducting transition temperature in cuprate high-temperature superconductors.
Methods of research: method of secondary quantization, Lang-Firsov transformation, perturbation theory method, quasiclassical approach (WK.B method), Frank-Condon principle, nonadiabatic and adiabatic approaches.
The results obtained and their novelty: condensed matter theory, theory of strongly interacting system of electrons and phonons, in particular theory of lattice Holstein polarons with long-range electron-phonon interaction are developed. Besides that in the thesis a theory of pairing of two polarons is developed and a new theory of influence of external pressure (strain) on the temperature of Bose-Einstein condensation of lattice bipolarons is proposed.
Practical value: lies in the possibility of their use in general for the development of solid-state theory, the theory of interacting electron-phonon systems, in particular the Holstein’s lattice-polaron theory. In addition, from a practical point of view, the developed methods allow us to calculate the mass of the charge carrier in the cuprates, to calculate the optical conductivity of polarons, assess the conditions of existence of two-site bipolaron, and the superconducting transition temperature based on the bipolaron model of superconductivity.
Degree of embed and economic effectivity: The work is fundamental and its results can be used for theoretical interpretation of experimental data on the effective mass of carriers in the cuprates, the optical (IR) absorption of the cuprates, the order parameter of superconductivity in cuprates and in experiments on the effect of external pressure (strain) at superconducting transition temperature of cuprates.
Field of application: condensed matter physics and high temperature superconducting material science.
Markovian and non-Markovian dynamics of quantum and mezoscopic systems
Topicality and relevance of the theme of the dissertation. At present time, a theoretical study of the dynamic problems of nonequilibrium quantum systems is one of the fundamental problems of modem theoretical and experimental physics. The phenomena of fluctuations and dissipations of nonequilibrium quantum systems arc usually investigated in the framework of the standard technique of the theory of quantum Markov processes. It is known that the response of real physical, technical and biological systems to external random effects is a non-Markovian process, and the non-Markovian effect increases with the complexity of the system. Consequently, such systems can not be described by standard methods developed on the basis of Markov processes. In connection with this, the development of mathematical methods for describing non-Markov random processes becomes topical.
In our Republic, great attention is paid to the development of theoretical physics and the conduct of fundamental research on these areas at the world level. In this respect, significant results were achieved, in particular: in solving theoretical problems of nonequilibrium quantum systems and their practical application, developing methods for the analytical determination and calculation of nonstationary transport coefficients, theoretical study of the nuclear reaction with heavy ions, the influence of external fields on open quantum systems and nonequilibrium processes.
In accordance with the "Strategy of actions on further development of the Republic of Uzbekistan", the most important is to increase the efficiency of the physics sector of the nonequilibrium system and nanotechnology on the basis of theoretical and practical research in the field of nonequilibrium quantum systems and dissipative nonequilibrium quantum processes through the introduction of innovative technologies.
At the present time, new experimental data have been obtained on the subbarrier fusion of nuclei in collisions of the low energies heavy ions, tunnel transitions with dissipation in crystals, in effects associated with strong, weak and superweak impact of magnetic fields of various nature on a variety of complex physical and biological objects, trends that can not be explained within existing traditional approaches and models. Theoretical explanation of a large number of such effects is an actual problem of modem theoretical physics. Taking into account non-Markovian effects in tunnel transitions is not completely solved by the problem of the nonequilibrium quantum systems, therefore, solving the problem of a quantum tunnel transitions with dissipation may prove to be important in the study of nuclear, atomic low-dimcnsional and low-tcmpcraturc mesoscopic systems.
The development of a method to determining the time-dependent transport coefficients and the widths of the decay of mctastable states is necessary when describing and explaining experimental data on the nuclear reactions of complete fusion, quasi-fission, fission and capture of the nucleus by the nucleus. In addition, theoretical data on the tunnel transition with dissipation arc extremely necessary for the transport of electrons in quantum dots and wells, and also for solving one of the important problems of nuclear astrophysics-thc fusion of nuclei in superdense astronomical objects.
This research work corresponds to the tasks approved in the state normative documents, in the Decrees of the President of the Republic of Uzbekistan No. PR-1443 “On the priorities of industry development of the Republic of Uzbekistan in 2011-2015” of 15 December 2010 and No.PR-2789 “On measures to further improve the activities of the Academy of Sciences, organization, management and funding research activities” of 17 February 2017, and the Decree of the President of the Republic of Uzbekistan No. PD-4958 “On the further improvement of the system of postgraduate education” of 16 February 2017.
The aim of the research is to develop a formalism to describe the Markovian non-Markovian dynamics of quantum systems.
The scientific novelty of the research is as follows:
a system of nonlinear quantum stochastic equations arc obtained and solved analytically in the limit of the complete connection between a harmonic oscillator and a quantum thermostat in the rotating wave approximation;
a technique for obtaining time-dependent transport coefficients has been developed, and analytical formulas have been obtained for calculating quantum fluctuations in nonequilibrium quantum systems;
the Markovian quantum equation for the density matrix is derived from the generalized non-Markovian stochastic equation and quantum fluctuation-dissipative (FD) relations arc obtained;
a system of nonlinear stochastic equations with allowance for an external magnetic field is obtained and analytically solved;
the values of non-stationary friction and diffusion coefficients for a two-dimensional charged quantum harmonic oscillator in a homogeneous magnetic field arc calculated;
an analytical expressions arc obtained for the asymptotics of transport coefficients and correlation functions for a two-dimensional charged oscillator;
the power law of the decay of the correlation functions of an oscillator with a complete coupling in the low-temperature and long-time limit has been predicted;
the role of quantum and non-Markovian effects in reactions with heavy ions is established.
Maksimin masalasini parametrga bogʻliq chiziqli tengsizliklar sistemasi yechimlari mavjudligini aniqlashga tatbiqi
Magnetics and transport properties ion implantation silicon with manganese
The aim of the research work was definitions of possibility of creation of a ferromagnetic condition in a highly compensated monocrystallinc silicon doping by method ion implantations and complex investigation of formation nanocluster structures, and also to research of clcctrophysical, magnetic properties.
Scientific novelty of the research work:
for the first time, is shown, possibility of obtaining by ion implantation method monocrystallinc highly compensated semiconductor, containing high spin nanoclusters with ferromagnetic properties;
for the first time, it is revealed formations high spin magnetic nanoclusters manganese at ion implantation and under certain conditions annealing of samples;
it was found ferromagnetism of samples Si <B, Mn> at a room temperature;
for the first time, it is revealed positive magnetoresistance and a kinetics and hysteresis of magnetoresistance connected with magnetic nanoclusters of manganese in an ion implanted samples Si <B, Mn>;
it is revealed the mechanism of magnetization and existence of the ferromagnetic condition, influencing transport properties of samples;
existence of a ferromagnetic condition it is explained by existence of exchange interaction between electrons of ions of impurity in a clusters and interaction between clusters;
it was found out that interaction between clusters and exchange interaction in clusters is not entered within the limits of one theory.
Low-temperature photoluminescence in semiconductor structures CdTe, CdTe: In
The aim of research work is to determine the mechanisms of formation of the spectra of exciton luminescence of single crystals and low-temperature photoluminescence of pure CdTe doped CdTe:In thin fine -grained films.
The scientific novelty of the research work:
the mechanism of formation of the polariton luminescence of semiconductor crystals of cadmium telluride with a small value of the longitudinal-transverse splitting ticoLT at finite mechanical damping of excitons;
defined fine structure of the polariton luminescence spectra of crystals of cadmium telluride and the dynamics of change of their shape under conditions of anomalous dispersion in the vicinity of the exciton resonance Лп=1, where the violation of the criteria of applicability of the Boltzmann kinetic equation for the distribution function of the polaritons;
it is shown that a sharp increase in short-circuit current doped indium structures of cadmium telluride are connected thermopolia migration of ions In+l and of cadmium vacancies in the crystal asymmetric electrostatic fields, grain boundaries, and their self-compensation;
it is established that the exciton Shtark effect and the generation process of the photo- EMF (electric motion force) barrier in the border areas of crystal grains fine-grained CdTe, CdTe : In films leads to the formation of low-temperature photoluminescence spectra that differ significantly from single crystals and coarse polycrystals;
first discovered the correlation between the spectrum of low-temperature photoluminescence and photovoltaic properties of fine-grained polycrystalline CdTe, CdTe: In films.
Kvant hujayrali avtomatika – nano o‘lchamli kompyuterlarni loyihalash uchun potentsial texnologiya
Korteveg-de friz tenglamasining simmetriyalar gruppasi
Korteveg-de Friz tenglamasi sayoz suvlarning uzun to‘lqinlar nazariyasi va nochiziqli effekt va dispersiya hosil bo’ladigan boshqa fizik sistemalarida uchraydi. Mazkur ishda Korteveg-de Friz tenglamasining simetriyalar gruppalari o‘rganilgan.
Influence of temperature and pressure on oscillation phenomena in semiconductors in a quantizing magnetic field
INTRODUCTION (abstract of PhD thesis). The thesis is devoted to the study of the temperature dependence of the thermodynamic density of states, quantum oscillation phenomena and interband magneto-optical absorption in semiconductors in a quantizing magnetic field, and also the study of the effect of pressure on the temperature dependence of quantum oscillation phenomena in semiconductors with a nonparabolic dispersion law.
The aim of the research work. Simulation of the influence of temperature and pressure on the oscillation phenomena of semiconductors in quantizing magnetic fields.
Influence of multielectron effects and concentration of particles on resonant high-harmonic generation of coherent radiation
Topicality and relevance of the subject of dissertation. Nowadays in the fast developing field of laser technologies and nonlinear optics the research directed to the study of influence of multielectron effects and concentration of particles on resonant high-harmonic generation for the production of coherent radiation in vacuum ultraviolet and soft X-ray range is considered one of the most promising directions of laser physics. At the same time the main attention is paid to increase the efficiency of generated harmonics in conditions of resonance and quasi-synchronization of phases of interacting waves. These studies arc connected with the application of coherent radiation in the field of laser physics, nonlinear optics, femtosecond holography, generation of attosecond pulses, spectroscopy of ultrafast processes.
Fulfillment of conditions of resonant high-harmonic generation and quasimatching of phases of pump radiation with radiation of harmonics provides substantial increase of efficiency of conversion of energy of femtosecond pulses with intensity 1014-1015 W/cm2 used as pump radiation into radiation of harmonics. In connection with this the possibilities of utilization of artificial nanomaterials which have complicated structure as well as ones like cndohcdral fullerenes in practice of high-harmonic generation remain weakly studied.
The demand for the subject of the dissertation is shown by the development of the methodology of high-harmonic generation in plasma formations, the enhancement of the efficiency of nonlinear frequency conversion at resonant high-harmonic generation, the study of nanoparticles which arc produced during the process of laser ablation. Moreover, the creation of highly efficient nonlinear elements on the basis of the laser ablation method, while being of special importance for the solution of important problems of nonlinear optics, give the possibility to obtain the theoretical results on the analysis of concentration of laser plasma.
The influence of concentration of free electrons on the efficiency of high-harmonic generation, as well as the influence of concentration of particles on high-harmonic generation still remain almost completely unstudied. The solution of these problems will help to establish basic laws and peculiarities of resonant high-harmonic generation in real systems which arc of practical interest in creating highly efficient sources of coherent radiation in vacuum ultraviolet spectral range.
This thesis is devoted to solving in a certain degree the problems noted in the Decree of the President of the Republic of Uzbekistan DP-1442 “On the priorities of industrial development of Uzbekistan in 2011-2015” of 15 December, 2010 as well as in other normative legal documents accepted in this field.
The purpose of the research is determination of the influence of multielectron effects and concentration of particles on resonant high-harmonic generation.
The scientific novelty of the research consists of the following results:
it is shown that multi-electron effects lead to resonant high-harmonic generation as a result of nonelastic scattering of accelerated electron on the ion with excitation of ion’s electrons to resonant level;
a mechanism of resonant high-harmonic generation was suggested, which explains the results of experiments on resonant high-harmonic generation and allows to optimize the process of resonant high-harmonic generation on the base of computation of optimal pump and ablation pulses;
usage of nonionized plasma as promising medium was suggested for the observation of resonant high-harmonic generation based on transitions in singly ionized media;
on the base of theoretical calculations of plasmon absorption peaks of Cf)0-molecule’s casing in endohedral fullerenes Сбо+In and Сбо+Sb to corresponding ionic resonances of encapsulated semiconductors as well as shift of the maximum of resonant enhancement of a group of harmonics to the new plasmon absorption peaks possibility of uniform enhancement of a group of harmonics in laser plasma created by evaporation of mixture of cndohadral fullerenes has been demonstrated;
a method was developed for the theoretical determination of the concentration of atoms, ions and free electrons in plasma which is based on consideration of enhancement of a group of high harmonics during quasi-phase matching at hte rocess of laser ablation using long heating pulses;
mechanisms of restriction of efficiency of frequency conversion with growth of concentration of particles in laser plasma of carbon created using ablation pulses with duration of 8 picoseconds and 10 nanoseconds were revealed;
a technique of determination of dependence laws of degree of ionization at givn concentrations was suggested which leads to enhancement of single high harmonic in the plateau region up to more than 1000 times at the combination of quasi-phase matching and resonant conditions.
CONCLUSION
1. For the first time reliable information about spectra of resonant high-harmonic generation is provided on the base of exact potentials and parameters of pump pulses close to the experimental ones.
2. It is shown that the resonant high-harmonic generation is determined by population of resonant state by means of excitation of inner electrons of ion to resonant level as a result of inelastic scattering of the accelerated electron as well as by subsequent recombination of electrons from the excited level to the ground state with generation of resonant harmonic due to stimulated emission influenced by nonresonant harmonic of the same order.
3. For the first time theoretical simulation of high-harmonic generation in the plasma of Сбо fullerenes was performed using the time-dependent density functional method for the case of fully modelling the contribution of all carbon atoms into molecular field, at the same time the enhancement of harmonics was obtained in the range of surface plasmon resonance of Сьо fullerenes 10 times higher than outside this range.
4. It is shown that in laser plasma of endohcdral fullerenes In C6o and Sb C6o shift of maximum of resonant enhancement of a group of high harmonics relative to pure Сбо due to shift of plasmon absorption maxima of fullerene casing to atomic resonances of embedded atoms.
5. It is shown that the main factor restricting the possibilities of enhancement of high-harmonic generation by increasing concentration of laser plasma is the breach of conditions of phase matching with increase of concentration of free electrons.
6. It is shown that optimal relative to conversion efficiency plasma of indium can be obtained using ablation pulses with duration of 10 picoseconds and intensity of 2x109 W cm’2, while optimal plasma of chromium is created using ablation pulses with duration of 100 femtoseconds and intensity of 1011 W cm’2, that is linked to different ionization degrees of resonant levels of these elements.
8. For the first time a technique of control of efficiency of resonant high-harmonic generation was developed based on control of duration and intensity of ablation pulse in plasmas with spatially modulated optical density.
Influence of deformation and strong electromagnetic field on dynamic characteristics of semiconductor structures
Topicality and necessity of the thesis. To date, intensive research in the direction of revealing their new physical properties, controlled by external influences, especially sensitive to light and microwave radiation and deformation, is underway in the world in the intensively developing direction of photo and tensor properties of semiconductor materials and structures. Making semiconductor materials unique properties in terms of managing their functional characteristics is an extremely important task. In this aspect, the study of the influence of deformation and a strong electromagnetic field on the dynamic characteristics of semiconductor structures is one of the promising directions.
In the years of independence, scientists of our country pay great attention to the development of technology for obtaining strain-sensitive and photosensitive semiconductor structures, in particular, methods for obtaining semiconductor materials doped with deep impurities, as well as film structures with anomalously large photovoltage, special attention is paid to the study of photoconductivity effects. In this direction, significant progress has been made in obtaining photo-and strain-sensitive structures based on narrow-gap and layered structures.
Today in the world, when studying the effect of deformation and a strong electromagnetic field on the dynamic characteristics of semiconductor structures, revealing the nature of EMF and currents arising in them under the influence of a strong electromagnetic field, illumination and deformation near critical points is of great importance. In this aspect, targeted research works, including the implementation of problems in the directions listed below, are considered to be one of the important tasks: the construction of a model of a system of potential barriers, which allows one to explain the anomalously large values of the strain-sensitivity coefficient in thin films obtained by vacuum deposition; Estimation of the deformation potential on the basis of the model of the potency barrier systems; elucidation of the possibility of controlling the strain-sensitivity of the p-n junction illuminated by the light of its own, subject to constant deformation; the elucidation of the possibility of controlling the photocurrents and photo EMFs generated in semiconductor photocells under the action of deformation and the microwave field; the possibility of using phase portraits to explain generation-recombination processes in semiconductors; a study of the thermal broadening of the energy levels and the density of states of a quasi-one-dimensional electron gas; The study of the temperature dependence of energy gaps due to lattice vibrations and thermal broadening of energy levels.
The research works carried out in the above mentioned directions indicate the relevance of the topic of this dissertation.
This dissertational research serves, to a certain extent, the fulfillment of the tasks stipulated in the Decree of the President of the Republic of Uzbekistan PP-1442 "On Priority Directions for the Development of the Industry of the Republic of Uzbekistan for 2011-2015" dated December 15, 2015 and No. -PP2789 "On Measures on further improvement of the activities of the Academy of Sciences,organization, management and financing of research activities "of February 17, 2017, as well as other normative and legal documents adopted in this field.
The aim of research work is to study physical processes under the influence of a strong electromagnetic field, illumination and deformation in semiconductors and semiconductor structures.
Scientific novelty of the research work:
It is established that, at the edge of fundamental absorption, when, the absorption coefficient increases strongly due to a change in the width of the forbidden band under the action of deformation, as a result, the coefficient of p-n junction susceptibility can assume anomalously large values.
It is shown that the change in the quasi-Fermi levels of electrons and holes under the action of deformation, light, and a strong microwave field explains the behavior of the I-V characteristic of the p-n junction under external influences;
It is established that under the action of deformation and light, photoelectrons and photoholes are mainly generated, in this case the EMF generated by the diode due to the change in the Fermi quasilevels will be negative, and when the microwave wave is applied, the electrons and holes are heated in this case, the EMF value will be positive, leading to a shift of the I-V characteristic in opposite directions;
It is established that when the frequency of the variable strain changes, if the product of the frequency and lifetime of the charge carriers becomes greater than unity, then the shape of the phase portraits (depending on) tends to a horizontal segment, and in the case when the product of the frequency of the variable deformation and the lifetime of the charge carriers becomes, the form of the phase portrait tends to a vertical segment, in the case where the phase portrait has the largest area.
the interrelation of recombination centers with the carrier concentration in a semiconductor is determined during deformation, so an increase in the recombination centers leads to a decrease in the concentration of charge carriers, turning the phase trajectory in the form of a spiral towards the lowest values, both along the axis and along the axis, and the decrease in the recombination centers in the semiconductor is reflected in an increase in the concentration of charge carriers, and the phase trajectory unfolds in the form of a spiral towards the highest values, both along the axis and along the axis . Accordingly, the phase portrait serves to monitor the state of the semiconductor under external influences.
It was established that the total change in the width of the forbidden band of MnIn5S8.5, FelmS^ and CuIn5S8 single crystals is determined not only by the interaction of electrons with lattice vibrations but also by thermal broadening of the energy levels in the allowed bands. In this case, the experimental dependences of the band gap on the temperature coincide with the theoretical curves.
Influence of a high microwaeve field on recombination currents on p-n-junction
The work is devoted to investigate of mechanisms of occurrence of currents and of electromotive forces (EMF) in p-n- junction, at the influence of microwaeve fields.
It is shown that the constant currents of electromotive force arising in p-n- junction placed on high microwaeve field are caused by recombination currents in the field of a volumetric charge of transition and on a surface of a sample. It is established, that the distortion of electromagnetic field inside the the sample results in increasing of recombination of currents in volume and on a surface of a sample. As a result of fluctuations of surface of potential under the influanced external microwaeve field increase constant currents and EMF, generated by the diode. It is shown, that in a regime of short circuit effective height of a potential barrier decreases in a mode of a single course are generated anomalous great EMF.
Vortical currents in samples by p-n- junction field, placed in a non-uniform microwaeve field is investigated in this work. It is shown, that the vortical currents reduce currents and EMF, generated of the diode.
The new mechanism of occurrence is of anomalous of the large photovoltage in thin semi-conductor films is effered in this investigation. It is arosen by jet photoEMF in view of a microrelief of a free surface of the sample.
The method of definition energy and concentration of surfase and volumetric condition is advenced by the using of charg coupled devices.
Formation patterns and electronic properties of nanoscale structures created on the surface and near-surface region of mo and si by method of ion bombarding
The aim of the research work. Obtaining nanoscale structures and multilayer systems based on Mo and Si single crystals by epitaxy and ion implantation, studying regularities and elucidating the physical mechanisms of their formation
The object of the research work. Monocrystalline Mo and Si samples implanted by ions in a wide energy range (0,2 - 40 keV) and doses (D = 1014 - 101 cm").
Scientific novelty of there search work. The physical mechanisms for the formation of intermetallic compounds of the Nb + Mo type in the near-surface Mo layer during the implantation of Nb + ions in combination with annealing have been established and it has been experimentally proved that the formation of an intermetallic compound leads to the formation of the Mo subband of 4d electrons Nb below the Fermi level of Mo, which leads to a change in the density of the valence electron state Mo.
It has been experimentally established that the intermetallic compound is not formed in the implantation of Ba’ ions in Mo, but as a result of the decrease in the work function and the increase in the atomic density of the near-surface layer, the emission efficiency of secondary and photoelectrons increases 2 or more times, the main regularities of the formation of nanoscale phases and MeSi2 layers in the near-surface region of Si in the process of ion implantation and subsequent annealing are established, and methods for estimating their dimensions and determining the parameters of the energy bands based on studying the change in the intensity of transmitted light are developed;
The technology of obtaining homogeneous polycrystalline nanofilms of SiCb of various thicknesses (d~20-100A) and with a bandgap width of ~ 8.5 * 9 eV by the implantation of O2+ ions on the Si surface has been developed;
It is justified that the presence of several percents of accelerated ions (Eo = 1-2 keV) in the stream of sputtered metallic substances (Al) leads to the complete destruction of a thin oxide film on the Si surface and to the creation of a transition layer leading to an increase in the adhesion of metal to silicon substrates and a sharp decrease in the contact electrical resistivity;
a method for obtaining nanoscale two-layer systems of the MeSi2/Si/MeSi2/Si (Me-Co, Na) type with an integrated thickness not exceeding 40-50 nm; the thickness of the CoSi2 surface film is 3 * 5 nm; the thickness of the near-surface film is 10 * 12 nm, and the thickness of the Si film between these layers is 10-20 nm.
Formation of defects in steatite ceramics SK-1 under influence of radiation
Object of research: the defects formation in steatite ceramics SK-1 under high-dose y- and n-y-reactor radiation.
Purpose of work: the purpose of this work is to establish the mechanisms of radiation-induced defect formation processes in the steatite ceramics SK-1 under у -radiation with the 6()Co source and the reactor n-y radiation.
Methods of research: TL, GL, X-ray luminescence and photo-luminescence, EPR, X-ray structure and activation analysis.
The results obtained and their novelty: In the work the nature of radiation defects is identified and mechanism of Mn2‘ luminescence is proposed. For the first time by using the complex method the processes of radiation-induced defects formation were studied in steatite ceramics SK-1. It was demonstrated that the radiation defects induced in SK-1 ceramics were caused by sub-threshold mechanism and mainly took place at the interface of crystal and glassy phases. Ions excitation, emission and quenching of recombination luminescence arc verified. It is established that the degradation of optical properties of SK-1 ceramics at high temperature annealing (Tann >850 °C) is caused by the phase transitions in crystal phase and partial crystallization of glassy phase. In the steatite ceramics SK-1 under the reactor irradiation new structure defects, like nonbridging oxygen hole centers (NBOHC) and different types of V- centers arc formed as compared to the y-irradiated reference sample.
Practical value: The obtained results significantly expand the variety of peculiarities in mechanisms of radiation-induced processes in complex oxide compounds which arc the ceramics insulators with complex phase-mineralogical composition.
Degree of embed and economic effectivity: The results can be implemented in the atomic energy, radiation physics and other fields of science and technology.
Field of application: physics of condensed state, atomic energy, radiation physics, material sciences and high-energy physics.
Fonopoetiks research of Uzbek literary speech (example of poems)
The aim of the research work: to systcmizc phono-poetic means of the Uzbek language, to define the theoretical foundations of phono-poetic means through poetic text analysis and revealing aesthetic, emotional function of them.
Scientific novelty of the research work: phonopoctic means of Uzbek poetry, such as gemination, onomatopoeia, anagramma, phonetic repetition were first presented in a monograph;
the methodological role of hermeneutics in the understanding and explanation of poetic speech, and there were indicated the emotional-expressive functions of the phonetic unions - vowels and consonants in the construction of poetic text;
the poetic, pragmatic and semantic functions of the sounds in literary speech, their significance in increasing connotation arc identified;
phonopoietic factors of poetic expression of phonetic unit in the Uzbek poetry system arc given;
the significance of the hijo and rukn to improve the literal power of poetry and the role of the rhythm and rhyme in poetry musicality arc proven.
FIZIKANI O‘QITISHDA ZAMONAVIY AXBOROT-KOMMUNIKATSIYA TEXNOLOGIYALARIDAN (AKT) FOYDALANISHNING AFZALLIKLARI VA KAMCHILIKLARI
Ushbu maqolada fizikani o‘qitishning zamonaviy talablari va shu jumladan fizika darslarida axborot kommunikatsiya texnologiyalaridan foydalanishning yutuqlari va kamchilliklari , ushbu texnologiyalarni qo‘llash uchun zarur shart-sharoitlar va qo‘yiladigan talablar haqida ma’lumot berilgan .
Fizika sohasiga xos terminlar tadqiqot obyekti sifatida (ingliz tili misolida)
Fizika fanining “kvant fizika” bo‘limini mikroolamning o‘ziga xos jihatlariga e’tibor qaratgan holda o‘qitish metodikasi
Ushbu maqolada akademik litseylarning fizika kursida Kvant fizikasi bo‘limini o‘qitishda mikroolam haqida asosiy tushunchalar keltirilgan.
Fizika fanida masalalarni yechish usullari
Features wave propagation in extended plate and cylindrical viscoelastic bodies related to environment
The aim of the research work. The aim of the study is to develop the theory and development of the scientific basis of wave propagation in the extended plate and cylindrical viscoelastic bodies associated with the environment.
Scientific novelty of the research work. The scientific novelty of the research is as follows: - the methods of solution and the algorithm of the spectral problem of the reduction to a system of ordinary differential equations with complex coefficients have been developed; - methods are developed for characterizing the damping property of a wave by a dissipative mechanical system; - it is determined that, under oscillations of a dissipatively inhomogeneous viscoelastic cylindrical shell with a viscous liquid, its dissipative processes proceed with the intensive, the closer the natural frequencies and the localization of the oscillation amplitudes near the shell; - it is determined that the significance of the phase velocities of waves in a viscoelastic medium (real parts of complex phase velocities) decreases by 10-15% compared to an elastic medium.
Features of magnetic phase transitions in rear earth iron-garnets
The aim of the research work is to provide new experimental results on spontaneous and induced by external influences phase transitions in magnetically ordered crystals, as well as the development based on these provisions of the existing thermodynamic theory of magnetic orientation phase transitions.
Scientific novelty of the research work is as follows:
For the first time carried out direct visual observation of the evolution of the domain structure of iron garnet ТЬо,2б¥2.74Ғе5012 during spontaneous reorientation direction of the easy axis, and it is shown that near the phase transition temperature of the studied magneto-optical susceptibility of the crystal has a narrow sharp peak, and the coercive force - is reduced.
The model of restructuring of the domain structure of iron garnet ТЬо,2б¥2.74ре50|2 in the temperature region of spontaneous reorientation of the easy axis, allowing consistently describe (qualitatively) the totality of the experimental results.
For the first time carried out experimental studies of the magnetic orientation phase transitions induced biaxial mechanical stresses in a cubic ferrimagnet.
The development of the phenomenological theory of induced mechanical stresses orientation phase transition in REIG.
EVALUATION OF PHYSICAL AND MECHANICAL PROPERTIES OF ALBENDAZOLE TABLETS USED IN VETERINARY PRACTICE
acid, its monoammonium and monopotassium salts
Elektron ta’lim: yangi pedagogik texnologiya
“Elcktron ta’lim” ta’lim jarayoniga tczlik bilan kirib kclmoqda. Ushbu maqolada uning yutug’i bilan birga elektron ta’limni joriy etishdagi muammolar taxlil qilinadi. Elektron ta’limni joriy etilishda “yangi pedagogik texnologiya”ni ishlab chiqish zarurati tug’iladi. Quyida “yangi pedagogic texnologiya” ta’rifi va kafolatli pedagogik jarayon loyixasi keltiriladi.
Electronic spectroscopy nanofilms and nanocrystals created by low-energy ion-bombardment of semiconductor and dielectric films
Subjects of research: Ion-beam treatment and electronic spectroscopy of a surface of solid.
Purpose of work: Research of legitimacy and finding-out of physical mechanisms of formation one- and multicomponent nanofilms, nanocrystals and superlattices on the basis of semiconductor and dielectric films at low-energy ion-bombardment in a combination with annealing.
Methods of research: Auger-electron spectroscopy (for research of composition), high energy electron diffraction, raster electron microscopy (for research of crystal structure and topography), ultraviolet photoelectron spectroscopy, spectroscopy elastic reflected electrons, spectroscopy characteristics loss energy electrons (for research of electron structure).
The results achieved and their novelty: For the first time the technique of obtained nanocrystals and nanofilms is developed on the basis of semiconductors and dielectric films with use of low-energy ion-implantation (Eo = 0.5-5 keV) in a combination with annealing (temperature + laser). The basic mechanisms of their formation are revealed. For the first time parameters of energetic zones and a crystal lattice of silicide nanofilms different thickness are appreciated. It is revealed, that at 9 < 5 - 6 nm with decreases of thickness of a film the width of the forbidden zone and value of a constant lattice "a" increases. The technique of an estimation of the critical sizes nanocrystals is developed at which there is a tunneling electron. The model of surface Si with nanocrystals silicide is developed.
Practical value: Results can be used for creation new nanomaterials and multilayered nanosizes geterostructure, necessary for devices micro-, opto- and nanoelectronics.
Degree of embed and economic effectivity: Practical recommendations for future use of the obtained results in electronic industry are developed. Results have been used at performance of grants (Patent RUz № IAP 04080. Method of obtained nanocrystals of silicide metal; Patent RUz № IAP 04081. Method of obtained three-componential nanostructure on the basis of arsenide gallium). The part of results is used in educational process (There is an act of introduction in educational process TSTU).
Field of application: physical electronics and physics of surface, micro-, opto-and nanoelectronics, ionic-beam and laser technology, production of semiconductor devices.