Volume 02 Issue 06-2022
94
American Journal Of Applied Science And Technology
(ISSN
–
2771-2745)
VOLUME
02
I
SSUE
06
Pages:
94-97
SJIF
I
MPACT
FACTOR
(2021:
5.
705
)
(2022:
5.
705
)
OCLC
–
1121105677
METADATA
IF
–
5.582
Publisher:
Oscar Publishing Services
Servi
ABSTRACT
The paper studies the effect of cluster-type inhomogeneity on the properties of AFN - elements from crystalline and
thin-film structures of gallium arsenide and gallium phosphide. The effects of birefringence, magneto-optical and
electro-optical are studied.
KEYWORDS
AFS - elements, photovoltaic, magneto-optical, electro-optical properties, amorphous and crystalline structure.
INTRODUCTION
In order to determine the effect of non-stoichiometric,
non-uniformity
of
AFN-elements
on
their
photoelectric, magneto-optical, electro-optical and
other properties, special methods for obtaining AFN-
elements are required. The fact is that in
homogeneities are often the causes of the anisotropy
of photoelectric effects and their anomalies, especially
in strong electric magnetic fields, and can completely
distort the measurement results. This makes us take a
fresh look at some anomalous results on the AFN -
effect [1]. A detailed study of the influence of
inhomogeneity on the properties of AFN - elements has
been little studied. We have to state that the problem
of creating and controlling in homogeneities on AFS
elements has not been solved in the general case. The
technology
for
obtaining
AFS-elements
with
birefringence is considered for the first time. To do this,
we have developed a technological measuring system
that provides heterogeneity in structure and
composition.
Heterogeneity
in
structure
and
composition is achieved with doping with isovalent
impurities during the production of AFS elements. The
Research Article
INVESTIGATION
OF
CLUSTER-TYPE
INHOMOGENEITY
IN
SEMICONDUCTORS
Submission Date:
June 10, 2022,
Accepted Date:
June 20, 2022,
Published Date:
June 30, 2022
Crossref doi:
https://doi.org/10.37547/ajast/Volume02Issue06-15
O.S. Rayimjonova
Head of the Department of Telecommunication Engineering, Tashkent University of Information Technologies
Fergana branch, Uzbekistan
Journal
Website:
https://theusajournals.
com/index.php/ajast
Copyright:
Original
content from this work
may be used under the
terms of the creative
commons
attributes
4.0 licence.
Volume 02 Issue 06-2022
95
American Journal Of Applied Science And Technology
(ISSN
–
2771-2745)
VOLUME
02
I
SSUE
06
Pages:
94-97
SJIF
I
MPACT
FACTOR
(2021:
5.
705
)
(2022:
5.
705
)
OCLC
–
1121105677
METADATA
IF
–
5.582
Publisher:
Oscar Publishing Services
Servi
weight of the technological cycle of evaporation takes
place at a variable temperature and angle of spraying.
The temperature control of the deposition angle in the
process of obtaining a thin film of AFS elements is
carried out continuously according to a linear law using
an automatic controller. A specially designed scheme
sets the required temperature and deposition angle for
the sample, sets the sequence of the operation for
supplying isovalent dopants. As a result, in a single
technological cycle, heterogeneity is achieved in
composition and structure, both on the surface and in
the volume of AFS elements.
THE MAIN PART
Knowledge of the degree of inhomogeneity of
materials is very important not only in the manufacture
of semiconductor devices, but also in the study of the
materials themselves. A vivid exemplary material
heterogeneity is a polycrystalline structure. It is natural
to expect that the properties of the crystals
themselves can differ significantly from the properties
of the intergranular interlayer. The polycrystalline
structure is most typical for thin films of any type, even
single-crystal ones, but with a coherent orientation of
microblocks. If the crystallites of microblocks can be
assigned properties similar to the bulk properties of a
given
semiconductor, then
with
respect to
intercrystalline layers it can be very different. The
formation of intercrystalline layers can be due to the
following:
a)
A “hose” to crystallites taken out during their
recrystallization and representing various
impurities and inclusions;
b)
Foreign compounds formed from the
components of the base material and
individual impurities;
c)
The usefulness of the composition of the films,
characteristic
of
folded
semiconductor
compounds, while p-n transitions can occur at
the phase boundary;
d)
Precipitation of one of the components of the
composition, for example, metal in the
compound AIII BV;
e)
The difference in the structure of the phases,
for example, amorphous and crystalline;
f)
Oxide of the surface layer of the crystallite;
g)
A depleted layer caused by the capture of
carriers by the surface levels of crystallites;
h)
Incomplete contact of crystallites throughout
their thickness.
Obviously, the layers can be formed by a combination
of the above factors. Often, interlayers can completely
determine the semiconductor properties of a
polycrystalline material. The complexity of interpreting
the results of measurements on polycrystalline
materials is aggravated by the fact that often there is
no complete clarity about the nature of intercrystalline
interlayers and their parameters in a particular
material.
It is known that the APV effect is mainly observed in
polycrystalline films. The observed anomalies in here
are mainly attributed to the influence of intergranular
interlayers. Currently, two trends prevail in explaining
the nature of the action of interlayers: one is based on
the theory of complex electrical circuits; the other is
based on the barrier theory [2, 3]. Mastov [4] was one
of the first authors who considered the photoelectric
equivalent circuit of APV films in the analysis of the
PME effect. In the simplified model, the crystallites are
separated by high-resistance interlayers. In turn, high-
resistance regions can be not only intercrystalline
interlayers, but, most likely, microcrystals [5].
Since the interlayers have a certain slope with respect
to the substrate plane, the current flowing through the
film is forced to cross the interlayer boundary. As a
result, charge carriers experience scattering not only
on intercrystalline barriers, but also on the barriers of
modification layers. Thus, not only the polycrystalline
inhomogeneous structure, but the defectiveness of
the crystallites themselves are anomaly factors in APV
elements. As mentioned above, AFN AFMN and other
magneto-optical, electro-optical effects are sensitive
to inhomogeneity’s in the AFN - element. Therefore,
there are doubts about the correctness of the results
Volume 02 Issue 06-2022
96
American Journal Of Applied Science And Technology
(ISSN
–
2771-2745)
VOLUME
02
I
SSUE
06
Pages:
94-97
SJIF
I
MPACT
FACTOR
(2021:
5.
705
)
(2022:
5.
705
)
OCLC
–
1121105677
METADATA
IF
–
5.582
Publisher:
Oscar Publishing Services
Servi
of [6-8], in which the APV effect in CdTe films was
considered.
In many theories of semiconductor physics, layer
thickness is an important parameter, and for this
reason films are often a good means of
experimentation.
𝑉 =
(𝑏−1)𝐵𝐿
𝜇(𝑛
0
+𝑝
0
)(1+𝛼
𝑖
)
(1)
В - light intensity
L - diffusion length
𝛼
i
, - surface recombination rate on an illuminated
surface
Numerical verification by the method of "Machine
experiment" (variation method) showed that in the
formation of AFS acting is N kT/q which is mainly
determined by the photo activity of microcrystals [9-
10].
CONCLUSION
In conclusion, it should be noted that the source of the
elementary photo voltage in the APV effect is a
separate microcrystal of the layer; it must be
inhomogeneous. The presence of high-resistance
intercrystalline interlayers is a necessary condition for
the photo voltage in these areas not to be shunted by
the low resistance of neighboring microcrystals. When
samples are illuminated in homogeneous areas,
separation of carriers does not occur. Estimation of the
sizes of individual crystals and comparison of the
thickness of the layers with the values of photo
voltages showed that the highest photo voltages are
exhibited by layers whose thickness approximately
corresponds to the linear size of microcrystals.
Naturally, with an increase in the layer thickness, the
shunting effect of the volume increases. In the area of
small thicknesses, the leakage resistance of individual
micro-junctions begins to play a significant role.
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Volume 02 Issue 06-2022
97
American Journal Of Applied Science And Technology
(ISSN
–
2771-2745)
VOLUME
02
I
SSUE
06
Pages:
94-97
SJIF
I
MPACT
FACTOR
(2021:
5.
705
)
(2022:
5.
705
)
OCLC
–
1121105677
METADATA
IF
–
5.582
Publisher:
Oscar Publishing Services
Servi
ionization system.
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