INVESTIGATION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF THE N-CDS/P-CU(IN, GA)SE2 HETEROSTRUCTURE
Keywords:
Abstract
In this work, current transfer mechanism in the n-CdS/p-Cu(In, Ga)Se2 heterostructure in the forward and reverse current directions at T=300 K is investigated. It has been established that the dark current-voltage characteristics of heterostructures built on a double logarithmic scale are described by power-law dependences type of the I=Vα. In the forward direction of the current, sections of the current-voltage characteristic were observed: α1=1 (ohmic) and α2=2 (quadratic), and for the reverse section of the current-voltage characteristic: α1=1 (ohmic), α2=0.25. From the quadratic section of the forward branch, the value µn∙τn=4.5∙10-10 cm2/V for the CIGS active layer was determined, which is explained by the processes of recombination of charge carriers through simple local centers.
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