Volume 02 Issue 11-2022
49
American Journal Of Applied Science And Technology
(ISSN
–
2771-2745)
VOLUME
02
I
SSUE
11
Pages:
49-52
SJIF
I
MPACT
FACTOR
(2021:
5.
705
)
(2022:
5.
705
)
OCLC
–
1121105677
METADATA
IF
–
5.582
Publisher:
Oscar Publishing Services
Servi
ABSTRACT
This paper presents the properties of compounds of molybdenum silicide Mo - Si. The molybdenum layer was formed
with a thickness of 1 ÷ 2 μm by magnetron sputtering onto the surface of a semiconductor
from a silicon single crystal
grown by the Czochralski method in an atmosphere of pure inert argon gas. The properties of molybdenum silicide
formed in the volume of silicon have been studied.
KEYWORDS
Magnetron sputtering, reactive gases, metal, semiconductor, silicide.
INTRODUCTION
Research Article
PROPERTIES OF MOLYBDENUM SILICIDE GROWN ON SILICON SINGLE
CRYSTALS
Submission Date:
November 01, 2022,
Accepted Date:
November 05, 2022,
Published Date:
November 23, 2022
Crossref doi:
https://doi.org/10.37547/ajast/Volume02Issue11-09
S.A. Muzafarova
Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan
K.M. Fayzullaev
Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan
M.R. Kayumova
Tashkent Chemical Technology Institute, Uzbekistan
G.T. Badalova
Tashkent Chemical Technology Institute, Uzbekistan
Journal
Website:
https://theusajournals.
com/index.php/ajast
Copyright:
Original
content from this work
may be used under the
terms of the creative
commons
attributes
4.0 licence.
Volume 02 Issue 11-2022
50
American Journal Of Applied Science And Technology
(ISSN
–
2771-2745)
VOLUME
02
I
SSUE
11
Pages:
49-52
SJIF
I
MPACT
FACTOR
(2021:
5.
705
)
(2022:
5.
705
)
OCLC
–
1121105677
METADATA
IF
–
5.582
Publisher:
Oscar Publishing Services
Servi
One of the tasks of modern materials science is the
creation of new materials with multifunctional
coatings [1
–
3]. Materials with such coatings are widely
used in various fields of technology, such as
construction, power engineering, microelectronics,
aviation, and others [4
–
7]. Magnetron sputtering is
widely used to apply various industrially significant
coatings [8]. Such as decorative, wear-resistant or
protective coatings with a thickness of several
micrometers, and for obtaining complex, multilayer
optical structures with layer thicknesses of several tens
of nanometers or electrically conductive coatings, the
properties and structures of which magnetron
sputtering systems allow you to set and vary within the
required ranges [9].
Within the framework of this work, they are
represented by the introduction of Mo atoms by
magnetron ion sputtering on the silicon surface. Using
the thermal cycling method to create heat-resistant
silicon single crystals, the Mo-Si structure was
subjected to thermal heating, where molybdenum
atoms migrate deep into the silicon volume. As a result,
as studies show, a complex of molybdenum silicide
compounds is formed.
The structure of silicide depends on the type of
chemical bond between silicon and metal atoms. The
silicide of alkali and alkaline earth metals have an ion-
covalent bond Mo-Si, the silicide of transition metals
have a metal-like bond. In the latter, the interaction
between the atoms of the elements is also due to the
metallic bond between the metal atoms and the
covalent bond between the silicon atoms. The lower
the donor ability of the metal, the higher the
proportion of the covalent component of the MoSi
bond.
Experiment. To obtain a uniform layer of molybdenum
Mo, the MSIR method was used by sputtering Mo from
a metal target in an inert argon gas medium. The flow
rate of the working gases was regulated using RRG-9
gas flow regulators. The pressure in the vacuum
chamber was measured using deformation and
ionization vacuum gauges. The substrate used was a p-
and n-type silicon single crystal with a purity of at least
99.9%, 0.5×1.5 cm in size and 1.4 mm thick. Before
coating, the surface of the silicon substrate was
cleaned with a cambric cloth with a mixture of polyrite
and rectified alcohol diluted in distilled water. After
loading the substrates into the working chamber, the
surface of the silicon single crystal substrates was
subjected to processing using a high-voltage ion source
in an argon atmosphere with a 5% oxygen content. The
physical thickness of the resulting metal layer was
calculated based on the optical thickness nh=λ0/4 was
1-2 µm. The film deposition rate (nm/min) was
determined based on the physical thickness obtained
and the coating time.
According to the equilibrium phase diagram of the Mo-
Si state, there are three compounds in this system:
molybdenum disilicide MoSi2, lower molybdenum
silicides Mo5Si3 and Mo3Si [10]. The solubility of silicon
in solid molybdenum is 3.35 at. % at 1820 °C and 9 at. %
at 2025 °C. The region of solid solutions based on the
Mo3Si compound is practically absent. There are three
eutectics in the system:
• Mo3Si
- Mo5Si3 at 26.4 at.% silicon and a temperature
of 2020 °C;
• Mo5Si3
- MoSi2 at 54 at.% silicon and temperature
1900 °С;
• MoSi2
- Si at 98.5 at.% silicon and a temperature of
1400 °С.
Volume 02 Issue 11-2022
51
American Journal Of Applied Science And Technology
(ISSN
–
2771-2745)
VOLUME
02
I
SSUE
11
Pages:
49-52
SJIF
I
MPACT
FACTOR
(2021:
5.
705
)
(2022:
5.
705
)
OCLC
–
1121105677
METADATA
IF
–
5.582
Publisher:
Oscar Publishing Services
Servi
In addition, according to [11], at a temperature of 1850
°C there is a eutectoid MoSi2 Mo5Si3 + MoSi2 and
at 1900 °C a peritectic
MoSi2 + Р
MoSi2.
Mo3Si silicide is formed by the peritectic reaction
Mo+Si=Mo3Si at 2025±20°C, has a cubic structure with
a period a = 0.4890 ± 0.0002. Mo3Si has a close-packed
cubic structure or a similar type. The large
compactness of the lattice emphasizes the metallic
nature of the Mo-Si bond, but there are also covalent
bonds between metal atoms in the phases.
According to [12], the homogeneity region of MoSi2
obtained by diffusion saturation in vacuum can be
several percent and tends to increase with increasing
siliconization temperature. The differences in the
concentration of elements are: for Si = 2.52 0.5%; for
Mo = 2 0.5%. Silicide MoSi2 undergoes an allotropic
transformation in the temperature range 1850 ÷ 1900
°C. The low-temperature variety
-MoSi2 has a
tetragonal structure. The high-temperature form -
MoSi2 has a hexagonal structure with parameters: a =
0.4642 ± 0.0005, c = 0.6529 ± 0.0005 nm, c/a - 1.406.
The MoSi2 boundary on the Mo side is located at 67.1 ±
1.0% (at.).
The low-temperature form of -MoSi2 is a tetragonal
cell with 2 Mo atoms and 4 Si atoms. Si atoms form a
frame, in the voids of which is Mo. The structure can
also be considered as consisting of layers parallel to the
(010) plane with the closest hexagonal packing. The
layers alternate in the order ABAB..., layer B is shifted
in the direction of the X axis by a/2. The shortest Mo-Si
distance is c/3. Chains of silicon atoms form zigzags
passing through Mo prisms parallel to the X and Y axes.
a three-dimensional silicon framework is created. The
high-temperature form of -MoSi2 has a hexagonal
structure (Table 1).
Table 1. Crystal chemical characteristics of molybdenum
silicide’s
Compound Syngonia
Lattice parameters, nm
c/a
X-ray density
g/cm
3
a
b c
Mo3Si
cube.
0.4890
-
-
8.968
Mo5Si3
Hex.
0.728
-
0.500
0.69
8.243
Mo5Si3
Tetr.
0.9642
-
0.495
0.5087
8.213
-MoSi2
Tetr.
0.3203
-
0.7855
2.452
6.267
--
MoSi2
Hex.
0.4642
-
0.6529
1.406
6.26
CONCLUSION
This paper presents magnetron ion sputtering of
Mo metal on the surface of a single-crystal silicon
semiconductor in an inert argon gas medium. The
presence of a small amount of molybdenum
silicides in it is able to heal the resulting defects in
the structure and facilitates the relaxation of
thermal stresses during a sharp change in
temperature. With an increase in the operating
temperature of structures, silicide compounds in
Volume 02 Issue 11-2022
52
American Journal Of Applied Science And Technology
(ISSN
–
2771-2745)
VOLUME
02
I
SSUE
11
Pages:
49-52
SJIF
I
MPACT
FACTOR
(2021:
5.
705
)
(2022:
5.
705
)
OCLC
–
1121105677
METADATA
IF
–
5.582
Publisher:
Oscar Publishing Services
Servi
the volume of silicon are the main dominant factor
in the diffusion dissolution of molybdenum
disilicide into metal.
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