Research Of The Boundary Of The Section Of A Photo Receiver Based On Mos pCdTe / CdO Structures
Keywords:
Abstract
In this work, we investigated an intermediate layer in the structure of a photosensitive MOS structure nCdO / pCdTe . X-ray phase analysis shows that the intermediate layer between Mo and pCdTe is rather complex in composition. It contains dichalcogenides - three oxide MoO3 and a thin layer of a composite material with the composition of ditelluride MoTe2 . According to X-ray diffraction measurements, the total thickness of the intermediate layer is no more than ~ 200Ǻ. It was shown that in the nCdO / pCdTe structure the base material CdTe mainly consists of a homogeneous cubic modification layer.
References
Sh.A. Mirsagatov, S.Kh. Shamirzaev , M.A.Makhmudov, S.I.Sadykov. Heliotekhnika, 1998. No. 5, p20-25.
V.I.Strikha , E.V. Buzaneva . Physical foundations of the reliability of metal-semiconductor contacts in integrated electronics. // M. Radio and communication, 1987, 254 p.
Y. Breza , EF Venger , RV Konakova. Ya.Ya. Kudrik , O.S. Litvin, P.M. Litvin, V.V. Milenin . // Surface, -1998, No. 5, p. 110-127.
A.E.Belyaev, N.S. Boltovets , V.N. Ivanov, A.B. et al. // FTP, 2009, Vol. 43, No. 11, pp. 1468-1472.
B.F. Or Mont., Introduction vfiz .x imiyu and crystal chemistry of semiconductors. M., High School, 1968. - 203 p .
Yu.K. Yezhovsky ., I.P. Kalinkin, K.K. Muravyova, V.B. Aleksovsky ., Synthesis of epitaxial films to CdTe. News of the USSR Academy of Sciences. Neorganicheskie materially.- 1973- T .9.-№ 7, with 1115-1 120.
American Society for Testing of Materials., ASTM-Powder diffraction tile search manner alphabetical listing and search section of frequently Encountered phase's inorganic. USA 1976.
Crystal chemical and physical properties of semiconductor substances. Directory. Publishing house of standards. Moscow, 1973, 102s.
Domashevskaya E. P. Ivkov S. A, Al Khaylani Hasan Ismail Dambos Radam Ali Obaid Radam, Ryabtsev S. V. / Features of the formation of thin layers of molybdenum disulfide MoS2 on metallic molybdenum at different temperatures // Condensed media and interfacial border, 2018 T. 20, number 1. p . 56-65
Domashevskaya E.P., Ivkov S.A., Al Khaylani Khasan Ismail Dambos , Ryabtsev S.V. / Features of the structure and optical properties of molybdenum trioxide MoO3 obtained under different technological conditions of gas transport deposition // Inorganic materials, 2019 , volume 55, no. 52-61
Danilin B.S. Mikaychev V.E. Syrchin V.S. magnetron sputtering systems Electronics industry 1976, no. 5 p. 43
Danilin B.S. Obtaining thin-film layers using a magnetron ion sputtering system. Foreign radio electronics 1978, No. 4, pp. 87-104.
A.A. Aliev, Sh.A. Mirsagatov, S. A. Muzafarova , A. A. Abduvayitov . Sat. Proceedings of the International Conference "Fundamental and Applied Problems of Physics" , Tashkent. 18-19 November 2004, pp. 211-214.
Bonilla Silvia, Enrique A. Dachiele . Electrochemical deposition and characterization of CdTe polycrystalline thin films. / / Thin solid films . - 1991-T. 204 -№2. r . 397-403.
A, A. Compaon Bhat . C.Tabory ,. S Liu, M.Nquyen ,. A. Audinli . LHTsien , RG Bohn Fabrication of CdTe solar cells by laser- drivin physical vapor deposition. Solar Cells. -1991-V30-# 1-4.p.7988.
Gil Yong Chung Sung Chan Park, K urn Cuo , Byung Tae Aim. Electrical properties of CdTe films prepared by close - spaced sublimation with screen printed source layers.// J Appl . Phys . 1995, V 78- number 9 , p . 5493-5498.
Physical and chemical properties of oxides. Directory under born in units . G.V.Samsonova. M., Metallurgy, 1978.
