Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr)

Sultanov N.A.; Raximov E.T.; Mirzajonov Z.; Axmadjonov M.F.

doi:10.37547/tajas/Volume02Issue10-06

30-10-2020 33-36 46 19

Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr)

It was shown from capacitive measurements that the concentration of chromium levels decreases after irradiation of the samples with gamma quanta of the 60Co isotope, and the rate of formation of A centres in Si (Cr) is 8-10 times higher than in the control samples.

The American Journal of Applied sciences

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Vol. 2 No. 10 (2020)

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Articles

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Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr). (2020). The American Journal of Applied Sciences, 2(10), 33-36. https://doi.org/10.37547/tajas/Volume02Issue10-06

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