Authors

  • Ergash Yuldashevich Turaev
    Doctor Of Physical And Mathematical Sciences, Professor Of Termez State University, Uzbekistan
  • Jasurbek Jumaev
    Master’s Students Of Termez State University, Uzbekistan
  • Shahlo Karimova
    Master’s Students Of Termez State University, Uzbekistan

DOI:

https://doi.org/10.71337/inlibrary.uz.tajas.9971

Keywords:

Charge state, symmetry , local environment of impurities, nuclear gamma-resonance spectroscopy, semiconductor, surface layer, atoms

Abstract

When studying the charge state and symmetry of the local environment of impurities, based on the data of nuclear gamma-resonance spectroscopy, it is concluded that the state of impurity atoms depends both on the type of conductivity and on whether these atoms are in the surface layer or in the bulk of semiconductors.

References

Turaev E.Yu., Seregin PP, “The nature of the state formed by tin and iron atoms in arsenic selenide” UFZh, 1991, p. 81-85.

Turaev E.Yu. et al. "The nature of the electrical inactivity of impurity atoms in the gallium-tellurium system." Physics and chemistry of glass, 1987, v. 13, pp. 696-700.

Turaev E.Yu. et al. "Study of the state of impurity atoms in amorphous silicon." Inorganic materials, 1991, vol. 27, p. 899-903.

Turaev E.Yu. et al. Seregin PP, “Investigation by the Mössbauer method of the effect of the crystal-glass transition on the structure of semiconductors.” Letter to ZhETF, no. 2, 1974, pp. 81-82.

Turaev E.Yu., Seregin PP, “Electronic spectra of crystalline and glassy arsenic chalcogenides.” Physics and chemistry of glass, 1977, vol. 3, no. 5 pp. 103-106.