Subjects of research: multilayers structures with similar semiconductors microarcas, p-n-, p-n-p-transitions; Si, CdTe, Si:Ag, CdTe:Ag, CdTe:Si films.
Purpose of work: developing technology of obtaining, alloying and activation of APV-films, investigation their properties investigations, especially photoclctrct state without external polarizing field, with the help of photoelectric methods, theory construction and creation of optical-electronic devices on the basis of APV-film.
Methods of research: technological methods based on thermal evaporation, alloying and impurities activation, additional predeposition, the method of angular diagrams; investigation of APV-effect spectrum, rclaxative curves investigation; solving continuity equation and kinetic equation.
The results obtained and their novelty: the method of mechanisms discrimination of APV-cffcct is offered, the analytical expression for the distribution of film thickness at an angle deposited was found, the mechanisms of APV-effcct in CdTe-films were defined, the theory of APV-effect in the films with demberov mechanism was worked out, in films with p-n-p-j unction mechanism. It has been worked out the theory of photoclectrct state in similar semiconductors, in p-n-transitions with two deep levels, the technology of getting Si and CdTe films with photoclectrct state without external polarizing field and has been suggested the method of parameters definition in deep levels.
Practical value: it was obtained experimental results and technological ways of manufacturing, alloying and activation of films with APV-cffcct, photoelectret state can be used for making a number of photoclectronic sets and their characteristic microparameters definition.
Degree of embed and economic effectively: the obtained results arc the base for development of photoreceiver devices in scientific - technical associations of Academy of Science of the Republic of Uzbekistan and other instrument making organizations.
Field of application: semiconductors physics, the technology of thin films, semiconductor optoelectronics, spectroscopy of deep levels in the semiconductors, instrument making industry and nondestructive check.
