Subject of research: tenzosensitivity films of ВьТез, SbjTej got under vacuum evaporation, high compensated silicon with deep level, flint p-n-transition, AGP film CdTe and Si.
Purpose of work: is a study of mechanism origin EMF in p-n-transition in strong microwave field.
The description in tenzosensitivities film by methods R(s) path and thermodynamics of the roundrobin processes.
Methods of research: the methods R(s) path in theories of the fluctuations. Modeling deforming effect. The Numerical experiments.
The results obtained and their novelty:
1. For the first time it is shown, that EMF arising due to non-uniform distribution of an electromagnetic field reduces vortical currents in p-n-transition.
2. The method of phase portraits for the first time is applied to research of deformation effects in semiconductors. The method of phase portraits allows to interpret all possible processes from one point of view.
3.Influence of illumination by own light on R (e) dependences of deformation effects Is established. It is shown, that factor tenzosensitivities the shined p-n-transition and own semiconductor it is possible to operate deformation £0, frequency and intensity of light.
Practical value: Method phase path can be use when checking the features semiconductor. The Results studies of tenzosensitivity can be used at development a new tenzogauges.
Degree of embed and economic effectivity: results of work can be applied in electronic industry, in the field of power and in development of new kinds of strain gauges. Can are useful in scientific researches by definition of concentration generation the centers and speed of generation in semiconductors. The received results can be used in educational process in higher educational institutions.
Field of application: Microelectronics, solid state physics, physics semiconductor, optoelectronics.
