The aim of the research work. Comprehensive study modification mechanisms and features forming nano-dimensional structures in the surface layers PdBa, CoSi2 and GaAs at low energy ion bombardment, followed by heat and laser treatment.
Scientific novelty of the research work. A structural model of the surface of Pd-Ba activated in high vacuum and in an oxygen atmosphere was proposed and a technique for uniformly activating the surface of Pd-Ba alloys of a cylindrical shape by laser ablation and implantation of Ba’ ions was developed;
It was shown that the shape and size of the nanocrystallinc phases formed on the surface of Pd and Pd-Ba at irradiation densities D < 1015 cm" depends mainly on the surface microrelief, and does not depend on D > 5 • 1015 cm’2 at high doses; The most likely mechanism for the formation of areas with a crystalline structure under the effect of implantation of large doses of ions is the heating of the target in the region of the thermal peak, leading to melting of the material;
homogeneous regularly located nanoscalc phases and epitaxial nanofilms of Si and CoSiO on the surface of CoSii/Si (111) were obtained by the ion bombardment method (Ar+ and O’) in combination with annealing, and also the dependences of nanocrystallinc phase dimensions on energy and ion dose were determined;
mechanisms for the formation of one-component nanoscalc structures on the surface of materials of various types (metal alloy Pd2Ba, semiconductors CoSi2 and GaAs) and the type of chemical bond (intermetallic, covalent and ionic-covalent) in the bombardment with Ar+ ions;
Optimal conditions for ion bombardment and subsequent annealing of the Si-CoSi2-Si, CoSiO-CoSi2-Si, Ga-GaAs-Gc, GaAlAs-GaAs multilayer structures were determined and their energy band diagrams were constructed.
