THE INPUTS ARE ON INSERTED SILICON NON-BALANCED PROCESSES

Farkhod  Irisboyev

doi:10.71337/inlibrary.uz.science-research.24985

It is shown that it is possible to change the fundamental parameters of initial silicon samples by controlling the concentration of nanostructures of clusters of input atoms in the volume of silicon material, and on the basis of this, it is shown that there are opportunities to create new class of devices in nanoelectronics.

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How to Cite

THE INPUTS ARE ON INSERTED SILICON NON-BALANCED PROCESSES. (2023). Modern Science and Research, 2(10), 120-122. https://doi.org/10.71337/inlibrary.uz.science-research.24985

THE INPUTS ARE ON INSERTED SILICON NON-BALANCED PROCESSES

Most read articles by the same author(s)

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