Heterovarison structures based on silicon doped with impurity atoms of gallium and phosphorus and their applications in photoenergetics

The study of electrophysical properties of silicon doped with impurity atoms has revealed the formation of a binary GaP compound on the surface and near-surface layers. This formation leads to changes in the width of the forbidden zone, mobility of current carriers, and the zone structure of the initial material. Altering the forbidden band width of silicon results in a modification of the spectral sensitivity of the obtained materials. This paper demonstrates the potential for creating efficient photocells based on silicon with GaP binary compounds. The developed technology has enabled the production of silicon with GaP binary compounds. The formed binary compounds of gallium and phosphorus impurity atoms are mainly located in the nodes of the silicon crystal lattice. It is shown that these binary compounds in the crystal lattice of the original silicon form partially covalent and partially ionic bonds, existing in an electroneutral state. The energy required for the formation of free electrons in such binary compounds will be greater than that of the original silicon. It has been established that microheterovarison structures are formed in silicon with GaP binary compounds, leading to an expansion of the spectral range of solar radiation sensitivity. The analysis of the obtained research results indicates the possibilities of creating efficient photoelements based on silicon with GaP binary compounds in photoenergetics.